In recent years, the release of millimeter-wave technology in the RF field has seen significant growth. Beyond advancements in circuit design, this year's developments have drawn attention due to their support for new applications and innovative solutions that are only possible with millimeter waves. During Session 23 titled “mm-Wave Transceivers, Power Amplifiers & Sources,†Sony and the California Institute of Technology (Caltech) introduced a 56 GHz transceiver circuit for connecting input and output devices. Meanwhile, the University of California, Berkeley, the University of Padova, and STMicroelectronics presented a 90 GHz band transmission circuit designed for on-chip antenna switching. In addition, the University of Wuppertal in Germany unveiled a 650 GHz receiving circuit for a 160 GHz band transceiver and imaging array, marking nine notable announcements.
Sony’s presentation (Speech 23.1) highlighted a 56 GHz near-range wireless communication system capable of achieving an impressive 11 Gbit/s data transfer rate for HDTV and other high-speed device connections. The 40nm CMOS transceiver, combined with wire-bonded antennas, enabled communication over a distance of 1.4 cm at 6.4 pJ/bit. According to the researchers, compared to wired transmission, wireless methods offer greater energy efficiency, especially when data rates increase, as they reduce the power consumed during charging and discharging cycles. This insight sparked lively discussions among attendees, reflecting the growing interest in millimeter-wave technologies.
The University of Wuppertal (Speech 23.2) presented a 160 GHz orthogonal direct conversion transceiver using 0.13 μm SiGe BiCMOS technology. The oscillator operated between 52 GHz and 55 GHz, which is one-third of the transmit and receive frequency, generating a local signal after tripling. Helsinki University of Technology (Speech 23.3) introduced a 77–94 GHz band transmission circuit with image carrier rejection using 65 nm CMOS technology. At an output power of 6.6 dBm, the image suppression reached 15–20 dB, demonstrating strong performance.
The University of California, Berkeley, along with others, released a medical pulse radar transmission circuit (Speech 23.4). This circuit used 0.13 μm BiCMOS technology and employed a 90 GHz carrier with pulse modulation. A switch was integrated with the on-chip antenna to achieve a 35 ps pulse, leveraging the unique properties of millimeter waves that allow antennas to be integrated on chip.
The University of Modena and Reggio Emilia in Italy introduced an injection-locked 2x multiplier circuit (Speech 23.5) operating at 115 GHz with a tuning range of up to 13.1%. By employing a Push-Push configuration and injecting signals effectively, the tuning range was 3 to 5 times larger than traditional designs.
Three 60 GHz amplifier technologies were also presented. MediaTek and IBM (Speech 23.6) developed a 60 GHz amplifier using 65 nm CMOS, delivering 17.9 dBm power at 1V. It consisted of three stages with parallel configurations. UC Davis (Speech 23.7) released a 60 GHz amplifier that achieved 19.9 dBm from a 1.2V supply using 90 nm CMOS. The design included four pre-stages and parallel connections with Wilkinson splitters and combiners. STMicroelectronics (Speech 23.8) introduced a 60 GHz amplifier capable of producing 18.1 dBm at 1.2 V and 1.8 V, using eight parallel amplifiers in two stages.
Finally, the University of Wuppertal presented a 650 GHz receiving circuit for THz imaging (Speech 23.9), using 0.13 μm SiGe BiCMOS. It converted a 650 GHz signal and a signal at about 1/4 of that frequency into a 100 MHz IF signal, achieving a conversion gain of -13 dB and a noise figure of 42 dB. Although still in early stages, the university's work on 650 GHz frequencies highlights the potential of future THz systems.
Overall, the consistency between simulation and measured data across these technologies indicates a steady improvement in design accuracy. With better passive component design, such as seen in Speeches 23.6, 23.7, and 23.8, maximum output power has increased significantly. While integrated circuit design is crucial, related technologies like packaging must also evolve. This year, as last, saw many on-chip evaluation techniques, and there is great anticipation for further progress in packaging and other supporting technologies in the future.
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